Committees

Organizing Committee

General Co-Chairs

Pallab Bhattacharya, University of Michigan

Zetian Mi, University of Michigan

Program Co-Chairs

Stephanie Law, Pennsylvania State University

Amy Liu, IQE

Publication Co-Chairs

Alan Doolittle, Georgia Tech

Maria Hilse, Pennsylvania State University

Sanjay Krishna, The Ohio State University

Exhibition Co-Chairs:

Robert Sacks, MACOM

Ganesh Balakrishnan, University of New Mexico

Sadhvikas J. Addamane, Sandia National Laboratories

Technical Program Subcommittees

III-V Semiconductors

Chair: Stephanie Tomasulo, Naval Research Lab, USA

Seth Bank, University of Texas Austin, USA

Dan Wasserman, University of Texas Austin, USA

Sanjay Krishna, Ohio State University, USA

Huiyun Liu, University College London, UK

Zbig Wasilewski, University of Waterloo, Canada

II-VI, IV-VI, IV Semiconductors

Chair: Isaac Hernandez Calderon, CINVESTAV, Mexico

Moritz Brehm, Johannes Kepler University, Austria

Maria Hilse, Pennsylvania State University, USA

Masakazu Kobayashi, Waseda University, Japan

Hong Lu, Nanjing University, China

Maria Tamargo, City College of New York, USA

Yong Hang Zhang, Arizona State University, USA

2D Materials

Chair: Matthieu Jamet, CEA Grenoble, France

Dhavala Suri, Indian Institute of Science, India

Andrew Mannix, Stanford University, USA

Jill Miwa, Aarhus University, Denmark

Yoshinori Okada, OIST, Japan

Athanasios Dimoulas, INN Demokritos, Greece

AI/ML for MBE

Chair: Tiffany Kaspar, Pacific Northwest National Laboratory, USA

Ryan Comes, University of Delaware, USA

Brooks Tellekamp, National Renewable Energy Lab, USA

Yuki Wakabayashi, NTT Basic Research Laboratories, Japan

Heterogeneous Epitaxy and Integration

Chair: Laurent Cerutti, University of Montpellier, France

Ganesh Balakrishnan, University of New Mexico, USA

Minjoo Larry Lee, University of Illinois Urbana Champaign, USA

Hui Jia, University College London, UK

Kunal Mukherjee, Stanford University, USA

Jianjun Zhang, Chinese Academy of Science, China

Heterostructure and Nanostructures

Chair: Paul Simmonds, Tufts University

Rich Mirin, University of California Santa Barbara, USA

Elizaveta Semenova, Technical University of Denmark, Denmark,

Nobuhiko Ozaki, Wakayama University, Japan

Alain Quivy, University of Sao Paulo, Brazil

Ian Farrer, University of Sheffield, UK

Paola Atkinson, INSP, France

Javad Shabani, New York University, USA

Magnetic, Quantum, and Topological Materials

Chair: Jason Kawasaki, University of Wisconsin, USA

Joseph Falson, Caltech, USA

Shinobu Ohya, University of Tokyo, Japan

Nitin Samarth, Pennsylvania State University, USA

Julia Mundy, Harvard University, USA

MBE Fundamentals, Innovations, and Production

Chair: Minh Nguyen, HRL, USA

Carolina Adamo, Northrup Grumman, USA

James Gupta, Keysight, USA

Esperanza Luna, Paul Drude Institute, Germany

Mark O'Steen, Veeco, USA

Yoriko Tominaga, Hiroshima University, Japan

Nitrides

Chair: Songrui Zhao, McGill University, Canada

Matthew Brubaker, NIST, USA

Matthew Hardy, Naval Research Lab, USA

Alan Doolittle, Georgia Tech University, USA

Xinqiang Wang, Peking University, China

Jimy Encomendero, Cornell University, USA

Hieu Nguyen, Texas Tech University, USA

Sergei Novikov, University of Nottingham, UK

Oxides

Chair: Bharat Jalan, University of Minnesota, USA

Matt Brahlek, Oak Ridge National Lab, USA

Roman Engel-Herbert, Paul Drude Institute, Germany

Darrell Schlom, Cornell University, USA

Masaki Uchida, University of Tokyo, Japan

International Advisory Board

Hajime Asahi, Osaka University, Japan

Pallab Bhattacharya, University of Michigan, USA

Jianxin Chen, Shanghai Institute of Technical Physics, CAS, China

Al Cho, Alcatel-Lucent Technology, USA

Jen-Inn Chyi, National Central University, Taiwan

Nicolas Grandjean, Ecole Polytechnique Fédérale de Lausanne, Switzerland

Mircea Guina, Tampere University, Finland

James Gupta, Keysight Technologies, USA

James S. Harris, Stanford University, USA

Isaac Hernandez-Calderon, Center for Research and Advanced Studies, Mexico

Masataka Higashiwaki, Osaka Metropolitan University and NICT, Japan

Minghwei Hong, National Taiwan University, Taiwan

Yoshiji Horikoshi, Waseda University, Japan

Sergey Ivanov, Ioffe Institute, Russia

Zuimin Jiang, Fudan University, China

Masakazu Kobayashi, Waseda University, Japan

Sanjay Krishna, The Ohio State University, USA

Aizhen Li, Shanghai Institute of Microsystems and Information Technology, China

Amy Liu, IQE Inc., USA

Feng-Qi Liu, Institute of Semiconductors, CAS, Beijing, China

Ted Masselink, Humboldt University, Germany

Sergei Novikov, University of Nottingham, UK

Henning Riechert, Paul Drude Institute, Germany

David Ritchie, Universities of Cambridge and Swansea, UK

Miguel Angel Sanchez, Universidad Politecnica de Madrid, Spain

Stefano Sanguinetti, University of Milan Bicocca, Italy

Czeslaw Skierbiszewski, High Pressure Research Center of the Polish Academy of Sciences, Poland

Jin Dong Song, Korea Institute of Science and Technology, Korea

Masaaki Tanaka, The University of Tokyo, Japan

Eric Tournié, University of Montpellier, France

Charles W. Tu, University of California, San Diego, USA

Kang L. Wang, University of California, Los Angeles, USA

Zbig Wasilewski, University of Waterloo, Canada

Hiroshi Yamaguchi, NTT Basic Research Laboratory, Japan

Yong-Hang Zhang, Arizona State University, USA

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