Invited Speakers

Plenary Speakers

Masataka Higashiwaki

Osaka Metropolitan University

"Progress in Ga2O3 MBE and Device Technologies: From Early Milestones to Advanced Doping Control "

Huiyun Liu

University College London

"High-performance III-V quantum dots on Si substrates by MBE"

Yuefeng Nie

Nanjing University

"Exploring emergent phases in complex oxides via molecular beam epitaxy"

Maria Tamargo

The City College of New York

"Molecular beam epitaxy growth and characterization of 3-D topological insulators and magnetic topological materials"

Tutorial Speakers

Rich Bresnahan, Veeco

"30+ Years of MBE Hardware Innovation"

Minghwei Hong, National Taiwan University

TBA

Robert Sacks, MACOM

"Phosphorus MBE systems: maintenance and safety issues."

Invited Speakers

III-V Semiconductors

Seth Bank, UT Austin

Sanjay Krishna, The Ohio State University

Zbig Wasilewski, University of Waterloo

II-VI, IV-VI, IV Semiconductors

Johannes Aberl, Johannes Kepler University Linz

Wojciech Pacuski, University of Warsaw

2D Materials

C. Z. Chang, Penn State University

Sergei Novikov, University of Nottingham

Ryutaro Yoshimi, University of Tokyo

AI/ML for MBE

Roman Engel-Herbert, Paul Drude Institute

Chao Zhao, Chinese Academy of Sciences

Heterogeneous Epitaxy and Integration

Tobias Henksmeier, Paderborn University

Alec Skipper, AIM photonics/SUNY Albany

Heterostructure and Nanostructures

Kevin Silverman, NIST

Eugenio Zallo, Walter Schottky Institute - Germany

Magnetic, Quantum, and Topological Materials

Prof. Kouhei Hamaya, Osaka University

Prof. Tomoya Higo, Keio University

MBE Fundamentals, Innovations, and Production

Alan Doolittle, Georgia Tech

Clement Merckling, IMEC/ KU Leuven

Paul Pinsukanjana, IET

Nitrides

Elaheh Ahmadi, University of California, Santa Barbara

Yvon Cordier, Université Côte d'Azur

Debdeep Jena, Cornell University

Xinqiang Wang, Peking University

Oxides

Ryan Haislmaier, PsiQuantum

Julia Mundy, Harvard University

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